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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UJ3D1250K21200V 50A SIC SCHOTTKY DIODE G3, |
1,100 | 23.84 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2.34nF @ 1V, 1MHz | 0 ns | 400 µA @ 1200 V | 1200 V | 50A (DC) | -55°C ~ 175°C | 1.7 V @ 50 A | |
|
UJ3D1202TS1200V 2A SIC SCHOTTKY DIODE G3, |
8,200 | 2.63 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 109pF @ 1V, 1MHz | 0 ns | 22 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 5 A | |
|
UJ3D1725K21700V 25A SIC SCHOTTKY DIODE G3, |
342 | 16.86 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1500pF @ 1V, 1MHz | - | 360 µA @ 1700 V | 1700 V | 25A | -55°C ~ 175°C | 1.7 V @ 25 A |
|
UJ3D06560KSD650V 60A SIC SCHOTTKY DIODE G3, |
414 | 21.25 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1980pF @ 1V, 1MHz | 0 ns | 740 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A | |
|
|
UJ3D06510TS650V 10A SIC SCHOTTKY DIODE G3, |
2,627 | 3.86 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 327pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
UJ3D06512TS650V 12A SIC SCHOTTKY DIODE G3, |
2,751 | 5.25 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 392pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A | |
|
UJ3D1210TS1200V 10A SIC SCHOTTKY DIODE G3, |
3,252 | 6.50 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
|
|
UJ3D1210KSD1200V 10A SIC SCHOTTKY DIODE G3, |
571 | 7.09 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.6 V @ 5 A | |
|
|
UJ3D1210KS1200V 10A SIC SCHOTTKY DIODE G3, |
420 | 6.54 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
|
|
UJ3D1210K21200V 10A SIC SCHOTTKY DIODE G3, |
435 | 6.88 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
|
|
UJ3D06516TS650V 16A SIC SCHOTTKY DIODE G3, |
676 | 7.00 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
|
UJ3D06520TS650V 20A SIC SCHOTTKY DIODE G3, |
987 | 7.85 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 654pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A |
|
|
UJ3D06508TS650V 8A SIC SCHOTTKY DIODE G3, T |
717 | 3.50 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
UJ3D06506TS650V 6A SIC SCHOTTKY DIODE G3, T |
983 | 2.92 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 196pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
|
UJ3D1205TS1200V 5A SIC SCHOTTKY DIODE G3, |
3,622 | 4.02 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 55 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.6 V @ 5 A | |
|
UJ3D06504TS650V 4A SIC SCHOTTKY DIODE G3, T |
993 | 2.27 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 118pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A |
|
|
UJ3D06520KSD650V 20A SIC SCHOTTKY DIODE G3, |
422 | 8.38 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 654pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
UJ3D1220K21200V 20A SIC SCHOTTKY DIODE G3, |
536 | 10.29 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 810pF @ 1V, 1MHz | 0 ns | 190 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
|
|
UJ3D1220KSD1200V 20A SIC SCHOTTKY DIODE G3, |
445 | 11.55 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1020pF @ 1V, 1MHz | 0 ns | 220 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | |
|
|
UJ3D06530TS650V 30A SIC SCHOTTKY DIODE G3, |
829 | 11.78 |
RFQ |
Datasheet |
Tube | Gen-III | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 990pF @ 1V, 1MHz | 0 ns | 370 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |
