Analysis of Magnetic and

10/29/2022 11:00:08 AM

Over the past few years, semiconductor technology has come a long way, especially in the fields of power electronics with applications in research and heavy industry applications. Insulated-gate bipolar transistor (IGBT) modules play a crucial role as they are implemented in applications with high operating temperatures, fast switching speeds, higher reliability, etc. In such situations, getting precise results is of utmost importance as there may be several dangerous outcomes to the circuits or even the users operating the circuits if not calculated correctly.

In figure 7, the simulated outputs in different conditions and temperatures are shown for further understanding of the IGBT and its performance. The IGBT chip U6 in Fig. 11 (a) has the highest Vge value due to its proximity to the module packaging's gate control terminals, Figure 7 (b) displays the current distribution among the three paralleling chips. As per Fig. 11, Chip U6 describes the highest averaged total power loss (c) and In Fig. 7, the Tj variation over time is depicted (d). If there are temperature instabilities in the IGBT, there are various possibilities for long-term issues which may increase power loss and thermal stress.

The behaviour of IGBT semiconductor power modules with the EM-Electro-Thermal coupling, along with current sharing properties and thermal characteristics was studied. The simulation results conducted were achieved perfectly as per the prediction making it further scalable in various physical and electronic domains. With the results obtained, it can be said that there are higher chances to reveal the effects of IGBT power module packaging on the electro-thermal behaviour of the chips. With more extensive research on this topic, such systems can even be deployed in complex devices and have enhanced reliability.

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